Si7964DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73101 .
Document Number: 73101
S09-0272-Rev. C, 16-Feb-09
www.vishay.com
5
相关PDF资料
SI7994DP-T1-GE3 MOSFET N-CH DL 30V PWRPAK 8-SOIC
SI7997DP-T1-GE3 MOSFET P-CH 30V 8-SOIC
SI7998DP-T1-GE3 MOSFET 2N-CH 30V 25A PPAK 8SOIC
SI8405DB-T1-E3 MOSFET P-CH 12V 3.6A 2X2 4-MFP
SI8417DB-T2-E1 MOSFET P-CH 12V 14.5A 2X2 6MFP
SI8439DB-T1-E1 MOSFET P-CH 8V D-S MICROFOOT
SI8441DB-T2-E1 MOSFET P-CH 20V 10.5A 2X2 6MFP
SI8447DB-T2-E1 MOSFET P-CH D-S 20V MICROFOOT
相关代理商/技术参数
SI7970DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 40-V (D-S) MOSFET
SI7970DP-T1-E3 功能描述:MOSFET 40V 10.2A 3.5W 19mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7971DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET
SI7973DP-T1-E3 功能描述:MOSFET 12V 12.8A 1.4W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7973DP-T1-GE3 功能描述:MOSFET 12V 12.8A 3.5W 15mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7980DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
SI7980DP-T1-E3 功能描述:MOSFET 20V 8.0A 19.8/21.9W 22/15mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7980DP-T1-GE3 功能描述:MOSFET 20/20V 8.0/17A 22/15mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube